Manufacturer Part Number
IXGR24N60C
Manufacturer
IXYS Corporation
Introduction
High-speed, high-power insulated-gate bipolar transistor (IGBT)
Suitable for various power conversion and motor control applications
Product Features and Performance
Low on-state voltage drop
Fast switching speed
High short-circuit withstand capability
Robust and reliable design
Product Advantages
Improved efficiency in power conversion
Reduced system size and weight
Enhanced system reliability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 42 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Gate Charge: 55 nC
Current Collector Pulsed (Icm): 80 A
Td (on/off) @ 25°C: 15ns/75ns
Quality and Safety Features
Meets industry safety and reliability standards
Undergoes rigorous testing and quality control
Compatibility
Compatible with various power conversion and motor control applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Currently in production
Replacement or upgrade options available upon request
Several Key Reasons to Choose This Product
High efficiency and performance
Fast switching speed for improved system response
Robust and reliable design for long-term operation
Compatibility with a wide range of power conversion and motor control applications
Availability of replacement or upgrade options to support product lifecycle
IXGQ90N33TCD1 MOSIXYS / Littelfuse