Manufacturer Part Number
IXGR120N60B
Manufacturer
IXYS Corporation
Introduction
High-performance insulated gate bipolar transistor (IGBT)
Suitable for various power conversion and control applications
Product Features and Performance
High power density and efficiency
Fast switching speed with low switching losses
Wide operating temperature range of -55°C to 150°C
Product Advantages
Reliable and robust design
Suitable for high-power, high-frequency applications
Excellent thermal management capabilities
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 156 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Gate Charge: 350 nC
Switching Energy: 2.4mJ (on), 5.5mJ (off)
Td (on/off) @ 25°C: 60ns/200ns
Quality and Safety Features
Designed and manufactured to high quality standards
Meets relevant safety and environmental regulations
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Industrial motor drives
Power supplies
Inverters
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
High power density and efficiency
Fast switching speed with low switching losses
Reliable and robust design
Wide operating temperature range
Excellent thermal management capabilities
Suitable for high-power, high-frequency applications
IXGQ240N30PBIXYSIGBT 300V 240A 500W TO3P