Manufacturer Part Number
IXFH22N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET with ultra-low on-resistance and fast switching capabilities.
Product Features and Performance
Optimized for high-efficiency power conversion applications
Extremely low on-resistance (RDS(on) = 160 mΩ)
High voltage rating (650 V)
Low gate charge (Qg = 38 nC) for fast switching
Robust avalanche capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent efficiency in power conversion circuits
Enables high-frequency, high-power density designs
Reliable and rugged performance
Key Technical Parameters
Drain-Source Voltage (VDS): 650 V
Gate-Source Voltage (VGS): ±30 V
Continuous Drain Current (ID): 22 A
On-Resistance (RDS(on)): 160 mΩ
Input Capacitance (Ciss): 2310 pF
Power Dissipation (PD): 390 W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting (TO-247 package)
Application Areas
High-efficiency power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
This product is actively supported and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Ultra-low on-resistance for high efficiency
Fast switching capability for high-frequency operation
Robust design with wide operating temperature range
Reliable and proven performance in power conversion applications