Manufacturer Part Number
IXFH24N90P
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor for power electronics applications
Product Features and Performance
900V drain-source voltage rating
24A continuous drain current at 25°C
Low on-resistance of 420mΩ
High power dissipation of 660W
Fast switching with low gate charge of 130nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance for high-voltage, high-power applications
Efficient power conversion with low conduction and switching losses
Reliable operation across a wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 420mΩ
Continuous Drain Current (Id): 24A
Input Capacitance (Ciss): 7200pF
Power Dissipation (Pd): 660W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Compatible with various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Lighting ballasts
Product Lifecycle
This product is an active and commonly used MOSFET transistor
Replacement or upgrade options are available from IXYS and other manufacturers
Key Reasons to Choose This Product
Excellent performance and efficiency for high-voltage, high-power applications
Reliable operation across a wide temperature range
RoHS3 compliance for environmentally friendly use
Availability and compatibility with various power electronics applications
