Manufacturer Part Number
IXFH26N50
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power, high-frequency switching applications
Product Features and Performance
TO-247 package for efficient heat dissipation
500V drain-to-source voltage rating
26A continuous drain current rating at 25°C
200mΩ maximum on-resistance at 13A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 4200pF at 25V
High power dissipation capability of 300W at TC
Product Advantages
Excellent switching performance for high-frequency applications
Robust design for reliable operation in harsh environments
Compact and efficient package for space-constrained designs
Key Technical Parameters
Drain-to-source voltage (VDS): 500V
Maximum gate-to-source voltage (VGS): ±20V
On-resistance (RDS(on)): 200mΩ @ 13A, 10V
Continuous drain current (ID): 26A @ 25°C
Input capacitance (Ciss): 4200pF @ 25V
Power dissipation (PD): 300W @ TC
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, no discontinuation plans known
Replacements and upgrades may be available from IXYS or other manufacturers
Key Reasons to Choose This Product
Excellent switching performance and efficiency
Robust and reliable design for harsh environments
Compact and efficient package for space-constrained designs
Wide operating temperature range for versatile applications
RoHS3 compliance for environmental responsibility
