Manufacturer Part Number
IXFH28N60P3
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with advanced Polar3 technology for high-power, high-efficiency applications.
Product Features and Performance
600V drain-to-source voltage rating
28A continuous drain current at 25°C
260mΩ maximum on-resistance at 14A, 10V
Low input capacitance of 3560pF
Maximum power dissipation of 695W at 25°C
Product Advantages
Polar3 technology enables high efficiency and power density
Robust design for reliable performance in harsh environments
Superior switching characteristics for fast, low-loss operation
Key Technical Parameters
N-channel MOSFET structure
30V maximum gate-to-source voltage
5V maximum gate threshold voltage
50nC maximum gate charge at 10V
Quality and Safety Features
RoHS3 compliant
Through-hole TO-247-3 package for secure mounting
Compatibility
Suitable for a wide range of high-power, high-efficiency applications
Application Areas
Inverters, motor drives, power supplies, and other high-power electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available from IXYS Corporation
Key Reasons to Choose This Product
Excellent power handling and efficiency performance
Robust and reliable design for demanding applications
Compatibility with a wide range of high-power electronics
Ongoing support and potential upgrade paths from the manufacturer
