Manufacturer Part Number
IXFH30N60P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Designed for high-power switching applications
Product Features and Performance
High drain-to-source voltage rating of 600V
Low on-resistance of 240mOhm @ 15A, 10V
High continuous drain current of 30A (at 25°C)
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 4000pF @ 25V
High power dissipation capability of 500W (at Tc)
Product Advantages
Excellent efficiency and low switching losses
Robust design for reliable operation
Versatile applications in high-power switching circuits
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 240mOhm @ 15A, 10V
Continuous Drain Current (Id): 30A (at 25°C)
Input Capacitance (Ciss): 4000pF @ 25V
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Manufactured using high-quality MOSFET technology
Compatibility
Compatible with various high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation equipment
Renewable energy systems
Product Lifecycle
Active product with no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance and efficiency in high-power switching applications
Robust and reliable design for long-term operation
Wide range of compatible applications
Availability of replacement and upgrade options
