Manufacturer Part Number
IXFH34N65X2
Manufacturer
IXYS Corporation
Introduction
The IXFH34N65X2 is a high-performance N-channel MOSFET transistor from IXYS Corporation.
Product Features and Performance
650V drain-to-source voltage rating
34A continuous drain current at 25°C
105mΩ maximum on-resistance at 17A, 10V
-55°C to 150°C operating temperature range
Ultra-low gate charge of 56nC at 10V
High input capacitance of 3330pF at 25V
540W maximum power dissipation
Product Advantages
Excellent high-voltage and high-current handling capability
Ultra-low on-resistance for improved efficiency
Wide operating temperature range
Optimized gate charge for efficient switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 105mΩ @ 17A, 10V
Continuous Drain Current (Id): 34A @ 25°C
Input Capacitance (Ciss): 3330pF @ 25V
Power Dissipation (Tc): 540W
Quality and Safety Features
ROHS3 compliant
TO-247 (IXTH) package for optimal thermal performance
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Inverters
High-voltage, high-current industrial and consumer electronics
Product Lifecycle
Current production product
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capability
Ultra-low on-resistance for improved efficiency
Wide operating temperature range
Optimized gate charge for efficient switching
Robust TO-247 package for reliable operation
ROHS3 compliance for environmental safety