Manufacturer Part Number
IXFH40N30
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET
Designed for high-power switching applications
Product Features and Performance
Supports high drain-source voltage up to 300V
Extremely low on-resistance (RDS(on)) of 85 mΩ
High continuous drain current of 40A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
Excellent energy efficiency due to low conduction losses
Robust design for reliable operation in high-power applications
Suitable for a variety of power conversion and control circuits
Key Technical Parameters
Drain-Source Voltage (VDS): 300V
Gate-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 40A at 25°C
On-Resistance (RDS(on)): 85 mΩ at 500 mA, 10V
Input Capacitance (Ciss): 4800 pF at 25V
Power Dissipation (PD): 300W at 25°C
Quality and Safety Features
RoHS3 compliant
TO-247AD (IXFH) package for optimal thermal performance
Rigorous quality control and testing
Compatibility
Suitable for a wide range of power conversion and control applications
Can be used in various industrial, consumer, and automotive electronics
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Industrial automation and control systems
Product Lifecycle
Currently available and in production
No known plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for high-power switching applications
Robust and reliable design for demanding operating conditions
Supports high efficiency and energy savings in power conversion systems
Wide range of compatible applications and ease of integration