Manufacturer Part Number
IXFH42N50P2
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel Power MOSFET transistor with high voltage, high current and low on-resistance characteristics.
Product Features and Performance
Capable of handling high drain-source voltages up to 500V
Supports high continuous drain current of up to 42A at 25°C
Extremely low on-resistance of 145mΩ at 500mA, 10V
Fast switching with low gate charge of 92nC at 10V
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent for high-voltage, high-current power conversion and switching applications
Optimized for efficiency in power electronics designs
Robust and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 145mΩ @ 500mA, 10V
Continuous Drain Current (Id): 42A @ 25°C
Input Capacitance (Ciss): 5300pF @ 25V
Power Dissipation (Tc): 830W
Quality and Safety Features
RoHS3 compliant
TO-247AD package provides good thermal performance and reliability
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Power conversion and switching in industrial, automotive, and consumer electronics
Motor drives, inverters, power supplies, etc.
Product Lifecycle
Currently in production
No known plans for discontinuation
Compatible replacements and upgrades available from IXYS
Key Reasons to Choose
Excellent high-voltage, high-current capabilities
Extremely low on-resistance for high efficiency
Fast switching with low gate charge
Robust and reliable performance across wide temperature range
RoHS compliance and standard packaging for easy integration
