Manufacturer Part Number
IXFH36N60P
Manufacturer
IXYS Corporation
Introduction
The IXFH36N60P is a high-performance N-channel MOSFET transistor from the HiPerFET Polar Series, designed for a wide range of power electronics applications.
Product Features and Performance
High voltage rating of 600V Drain-Source Voltage (Vdss)
Continuous Drain Current (Id) of 36A at 25°C case temperature
Low On-Resistance (Rds(on)) of 190mΩ at 18A, 10V
Fast switching performance with low Gate Charge (Qg) of 102nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent energy efficiency due to low conduction and switching losses
Robust and reliable design for demanding power applications
Versatile usage across various power electronics systems
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 190mΩ @ 18A, 10V
Continuous Drain Current (Id): 36A @ 25°C
Input Capacitance (Ciss): 5800pF @ 25V
Power Dissipation (Tc): 650W
Quality and Safety Features
RoHS3 compliant
Housed in a TO-247AD (IXFH) package for reliable operation
Compatibility
Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and industrial control systems.
Application Areas
Motor drives
Power supplies
Industrial control systems
Renewable energy systems
Welding equipment
Lighting ballasts
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer or through authorized distributors.
Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage rating, high current capability, and low on-resistance
Efficient and reliable design for demanding power applications
Versatile usage across various power electronics systems
Robust construction and RoHS3 compliance for quality and safety
Availability of replacement or upgrade options from the manufacturer or authorized distributors
