Manufacturer Part Number
IXFH320N10T2
Manufacturer
IXYS Corporation
Introduction
High power N-channel MOSFET transistor in a TO-247 package.
Product Features and Performance
High current capacity up to 320A continuous (at Tc = 25°C)
Low on-resistance of 3.5 milliohms (at 100A, 10V)
Wide operating temperature range of -55°C to 175°C
High power dissipation capability of 1000W (at Tc = 25°C)
Fast switching speed and low gate charge of 430 nC (at 10V)
Product Advantages
Excellent thermal and electrical performance
Robust and reliable operation
Efficient power conversion
Suitable for high power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5 milliohms (max) at 100A, 10V
Continuous Drain Current (Id): 320A (at Tc = 25°C)
Input Capacitance (Ciss): 26,000 pF (max) at 25V
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long service life
Compatibility
TO-247-3 package
Suitable for use in high power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial electronics
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
Exceptional current handling capability up to 320A
Ultra-low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
High power dissipation for high-power density designs
Fast switching speed and low gate charge for improved efficiency
Robust and reliable construction for long-lasting performance
