Manufacturer Part Number
IXFH30N50
Manufacturer
IXYS Corporation
Introduction
The IXFH30N50 is a high-performance N-channel MOSFET transistor designed for a variety of power electronics applications.
Product Features and Performance
500V drain-source voltage rating
30A continuous drain current at 25°C
Low on-resistance of 160mΩ at 15A, 10V
High input capacitance of 5700pF at 25V
360W maximum power dissipation at 25°C
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in high-voltage, high-current applications
Robust design with high reliability
Versatile transistor suitable for various power electronics circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 160mΩ @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 5700pF @ 25V
Power Dissipation (Ptot): 360W @ 25°C
Quality and Safety Features
Robust TO-247-3 package design
Excellent thermal management capabilities
Compliant with industry safety standards
Compatibility
The IXFH30N50 is compatible with a wide range of power electronics applications and can be used as a replacement or upgrade for similar MOSFET transistors.
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
The IXFH30N50 is an active product, and IXYS Corporation continues to manufacture and support this transistor. Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
High-performance and reliable operation in high-voltage, high-current applications
Excellent thermal management and robust package design for long-term reliability
Versatile and compatible with a wide range of power electronics circuits
Cost-effective solution for power electronics applications
Backed by the expertise and support of IXYS Corporation
