Manufacturer Part Number
IXFH26N50P3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high-voltage capability.
Product Features and Performance
500V drain-source voltage
26A continuous drain current at 25°C
230mΩ maximum on-resistance at 13A, 10V
High-speed switching performance
Low gate charge for efficient switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High reliability and ruggedness
Efficient power conversion
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 230mΩ @ 13A, 10V
Continuous Drain Current (Id): 26A @ 25°C
Input Capacitance (Ciss): 2220pF @ 25V
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Suitable for high-voltage and high-current applications
Robust design for reliable operation
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product offering
No information on discontinuation or replacement
Key Reasons to Choose This Product
Excellent power handling and efficiency
High reliability and ruggedness
Wide operating temperature range
Suitable for a variety of high-power applications
