Manufacturer Part Number
IXFH24N80P
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high breakdown voltage for high-power switching applications.
Product Features and Performance
High voltage rating of 800V
Very low on-resistance of 400mΩ at 12A, 10V
High continuous drain current of 24A at 25°C
High power dissipation capability of 650W at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching performance with low gate charge of 105nC at 10V
Robust and reliable TO-247 package
Product Advantages
Excellent performance for high-power switching applications
Efficient power conversion with low conduction losses
Able to withstand high voltages and temperatures
Reliable and durable construction in industry-standard package
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 400mΩ at 12A, 10V
Continuous Drain Current (Id): 24A at 25°C
Power Dissipation (Pd): 650W at 25°C
Input Capacitance (Ciss): 7200pF at 25V
Gate Charge (Qg): 105nC at 10V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-247 package and pinout
Suitable for high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in active production with no plans for discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance characteristics for high-power switching applications
High voltage and current handling capabilities
Efficient power conversion with low conduction losses
Reliable and durable construction in industry-standard package
Wide operating temperature range for demanding environments
RoHS3 compliance for environmental responsibility