Manufacturer Part Number
IXFH26N50Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor with high voltage and high current capabilities.
Product Features and Performance
Voltage rating up to 500V
Continuous drain current up to 26A (at 25°C)
Very low on-resistance of 200mΩ (at 13A, 10V)
Fast switching speed and low gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Efficient power conversion and control
Reliable and robust performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 200mΩ (at 13A, 10V)
Continuous Drain Current (Id): 26A (at 25°C)
Input Capacitance (Ciss): 3900pF (at 25V)
Power Dissipation: 300W (at Tc)
Quality and Safety Features
MOSFET technology for high reliability and ruggedness
TO-247-3 package for efficient heat dissipation
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters and converters
Industrial and consumer electronics
Product Lifecycle
Current product offering, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose
High voltage and current handling capabilities
Excellent power efficiency and thermal performance
Reliable and durable construction
Compatibility with a broad range of applications
