Manufacturer Part Number
IXFH26N50P
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET with low on-resistance and high breakdown voltage for power electronics applications.
Product Features and Performance
High breakdown voltage of 500V
Low on-resistance of 230mΩ
Continuous drain current of 26A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3600pF
Maximum power dissipation of 400W
Product Advantages
Excellent performance for high-power, high-voltage applications
Robust and reliable design
High efficiency and low power losses
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 230mΩ
Continuous Drain Current (Id): 26A
Input Capacitance (Ciss): 3600pF
Power Dissipation (Pd): 400W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal performance
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power conversion and control
Motor drives
Industrial automation
Power supplies
Renewable energy systems
Product Lifecycle
The IXFH26N50P is an active product and is currently available from IXYS Corporation.
Key Reasons to Choose This Product
High power handling capability with low on-resistance
Excellent high-voltage performance
Robust and reliable design for demanding applications
Efficient and low-loss operation
Wide operating temperature range
