Manufacturer Part Number
IXFH22N50P
Manufacturer
IXYS Corporation
Introduction
High performance N-Channel MOSFET with low on-resistance and high blocking voltage capability.
Product Features and Performance
500V drain-source voltage
22A continuous drain current at 25°C
270mΩ maximum on-resistance at 11A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2630pF at 25V
Maximum power dissipation of 350W at 25°C
Product Advantages
Excellent performance in high voltage, high current switching applications
Robust and reliable design for demanding industrial environments
Optimized for efficient power conversion and control
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 270mΩ @ 11A, 10V
Continuous Drain Current (Id): 22A @ 25°C
Input Capacitance (Ciss): 2630pF @ 25V
Power Dissipation (Pd): 350W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality and reliability standards
Compatibility
TO-247-3 package
Compatible with standard MOSFET gate drive circuits
Application Areas
High voltage, high current switching applications
Power conversion and control systems
Industrial motor drives and power supplies
Product Lifecycle
Currently in production
Replacement or upgrade devices available if needed
Key Reasons to Choose This Product
Excellent performance in high power, high voltage applications
Robust and reliable design for demanding industrial environments
Optimized for efficient power conversion and control
Wide operating temperature range and high power handling capability
Compliance with RoHS3 directives for environmental responsibility
