Manufacturer Part Number
IXFH20N85X
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with ultra-low on-state resistance and high voltage rating, ideal for power conversion and switching applications.
Product Features and Performance
Extremely low on-state resistance (330 mΩ max)
High voltage rating of 850 V
Wide operating temperature range of -55°C to 150°C
Low input capacitance (1660 pF max)
High power dissipation capability (540 W max)
Fast switching characteristics
Product Advantages
Excellent performance in high-power, high-voltage applications
Efficient power conversion and switching
Reliable operation across a wide temperature range
Compact and easy to integrate into designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 850 V
Gate-to-Source Voltage (Vgs): ±30 V
Continuous Drain Current (Id): 20 A
On-State Resistance (Rds(on)): 330 mΩ
Input Capacitance (Ciss): 1660 pF
Power Dissipation (Tc): 540 W
Quality and Safety Features
RoHS3 compliant
Robust TO-247-3 package
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is an active part in IXYS Corporation's portfolio and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent performance in high-power, high-voltage applications
Extremely low on-state resistance for efficient power conversion
Wide operating temperature range for reliable operation
Compact and easy to integrate into designs
RoHS3 compliance for environmental responsibility