Manufacturer Part Number
IXFH18N100Q3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching capabilities, suitable for high-voltage, high-power applications.
Product Features and Performance
Low on-resistance of 660mΩ @ 9A, 10V
High drain-source voltage of 1000V
Wide operating temperature range of -55°C to 150°C
High power dissipation of 830W
Fast switching with low gate charge of 90nC @ 10V
Product Advantages
Excellent performance in high-voltage, high-power applications
Efficient power conversion and control
Reliable operation in harsh environments
Compact and easy to integrate
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 18A
On-Resistance (Rds(on)): 660mΩ
Input Capacitance (Ciss): 4890pF
Power Dissipation (Tc): 830W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
TO-247-3 package
Compatible with various high-power, high-voltage circuit designs
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Converters
Industrial and automotive applications
Product Lifecycle
Currently available
No indication of discontinuation or replacement
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-power applications
Efficient power conversion and control
Reliable operation in harsh environments
Compact and easy to integrate
RoHS3 compliance for environmental responsibility
