Manufacturer Part Number
IXFH20N80Q
Manufacturer
IXYS Corporation
Introduction
The IXFH20N80Q is a high-performance N-channel MOSFET transistor designed for power switching applications.
Product Features and Performance
800V drain-source voltage rating
20A continuous drain current at 25°C
Low on-resistance of 420mΩ at 10A, 10V
Fast switching characteristics with low gate charge of 200nC at 10V
Wide operating temperature range of -55°C to 150°C
Robust package with high power dissipation of 360W at 25°C
Product Advantages
Excellent efficiency and reliability for power conversion applications
Suitable for high-voltage, high-current switching
Compact and versatile package design
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 420mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A @ 25°C
Input Capacitance (Ciss): 5100pF @ 25V
Power Dissipation (Tc): 360W
Quality and Safety Features
Designed and manufactured to high-reliability standards
Robust TO-247 package with high thermal efficiency
Suitable for safety-critical applications
Compatibility
Suitable for a wide range of power switching applications, including motor drives, power supplies, and industrial electronics.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial electronics
Product Lifecycle
This product is an active and widely used MOSFET solution.
Replacement or upgraded parts may be available from IXYS or other manufacturers.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and reliability
Fast switching performance
Versatile package design
Suitable for a wide range of power electronics applications
