Manufacturer Part Number
IXFH21N50Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET with high breakdown voltage, low on-resistance, and fast switching characteristics.
Product Features and Performance
High voltage rating up to 500V
Low on-resistance of 250mΩ at 10.5A, 10V
High continuous drain current of 21A at 25°C
Fast switching with input capacitance of 3000pF at 25V
High power dissipation of 280W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance in high voltage, high current applications
Efficient power conversion with low conduction and switching losses
Reliable operation in harsh environmental conditions
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 250mΩ @ 10.5A, 10V
Continuous Drain Current (Id): 21A @ 25°C
Input Capacitance (Ciss): 3000pF @ 25V
Power Dissipation (Pd): 280W @ 25°C case temperature
Quality and Safety Features
Robust TO-247-3 package for high power and reliability
Stringent quality control and testing procedures
Compliance with relevant safety and environmental standards
Compatibility
Compatible with a wide range of power electronic applications and circuits requiring high-voltage, high-current, and fast-switching MOSFET performance.
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
The IXFH21N50Q is an active and widely available product from IXYS Corporation.
Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance in high-voltage, high-current applications
Efficient power conversion with low conduction and switching losses
Reliable operation in harsh environmental conditions
Robust and proven TO-247-3 package design
Compatibility with a wide range of power electronic applications
