Manufacturer Part Number
IXFH20N80P
Manufacturer
IXYS Corporation
Introduction
The IXFH20N80P is a high-performance N-channel MOSFET transistor designed for power switching applications.
Product Features and Performance
High-voltage rating up to 800V
Low on-state resistance (RDS(on)) of 520mΩ
High continuous drain current of 20A
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 86nC
Robust TO-247AD package
Product Advantages
Efficient power conversion and control
Reliable high-voltage operation
Optimized for high-power applications
Wide temperature capability for diverse use cases
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (ID): 20A
On-State Resistance (RDS(on)): 520mΩ
Input Capacitance (Ciss): 4685pF
Power Dissipation (Pd): 500W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-quality standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
Currently in active production
No plans for discontinuation or replacements announced
Key Reasons to Choose This Product
Excellent high-voltage and high-current capabilities
Low on-state resistance for efficient power conversion
Fast switching speed and low gate charge for high-frequency operation
Robust and reliable TO-247AD package for industrial environments
Wide operating temperature range for versatile applications