Manufacturer Part Number
IXFH20N100P
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor in TO-247 package
Product Features and Performance
High voltage rating up to 1000V
Low on-resistance (RDS(on)) of 570 mOhm
Continuous drain current of 20A at 25°C
Wide operating temperature range of -55°C to 150°C
High power dissipation of 660W
Product Advantages
Excellent switching characteristics for power applications
Compact TO-247 package for efficient heat dissipation
Suitable for a variety of power conversion and control circuits
Key Technical Parameters
Drain-Source Voltage (VDS): 1000V
Gate-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 570 mOhm
Input Capacitance (Ciss): 7300 pF
Gate Charge (Qg): 126 nC
Quality and Safety Features
ROHS3 compliant
Reliable and durable construction
Compatibility
Suitable for use in a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation and control systems
Product Lifecycle
This product is an active and widely used part. There are no immediate plans for discontinuation, and replacement options are readily available.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Compact and thermally efficient TO-247 package
Proven reliability and ROHS compliance for industrial use
