Manufacturer Part Number
IXFH46N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with excellent switching performance and low on-resistance.
Product Features and Performance
N-channel MOSFET with 650V drain-source voltage rating
Low on-resistance of 76mΩ at 23A, 10V
High continuous drain current of 46A at 25°C case temperature
Fast switching with low gate charge of 75nC at 10V
Wide operating temperature range of -55°C to 150°C
High power dissipation capacity of 660W at case temperature
Product Advantages
Efficient power conversion and control
Improved system reliability and performance
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 76mΩ @ 23A, 10V
Continuous Drain Current (Id): 46A @ 25°C
Input Capacitance (Ciss): 4810pF @ 25V
Power Dissipation (Tc): 660W
Quality and Safety Features
RoHS3 compliant
Through-hole TO-247-3 package
Compatibility
Suitable for high-voltage, high-current switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power handling capabilities
Efficient and reliable performance
Suitable for demanding high-power applications
Wide operating temperature range
RoHS compliance for environmental safety
