Manufacturer Part Number
IXFH58N20
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Part of the HiPerFET series
Product Features and Performance
Ultra-low on-resistance (RDS(on)) of 40 mΩ
High continuous drain current of 58A at 25°C
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage of 200V
Fast switching speed and low gate charge of 220 nC
High power dissipation of 300W
Product Advantages
Excellent efficiency and low power loss
Robust and reliable performance
Suitable for high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 200V
Gate-to-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 58A
On-Resistance (RDS(on)): 40 mΩ
Input Capacitance (Ciss): 4400 pF
Gate Charge (Qg): 220 nC
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Compatible with various industrial and power electronics applications
Application Areas
High-power switching
Motor drives
Power supplies
Inverters and converters
Industrial automation
Product Lifecycle
Current product, no signs of discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent efficiency and low power loss
Robust and reliable performance
Suitable for high-power, high-current applications
Wide operating temperature range
Fast switching speed and low gate charge
Meets high-reliability standards
