Manufacturer Part Number
IXFH60N65X2
Manufacturer
IXYS Corporation
Introduction
High-performance, ultra-low on-resistance N-channel MOSFET transistor
Product Features and Performance
High voltage capability up to 650V
Ultra-low on-resistance down to 52mΩ
High current handling up to 60A
Fast switching speed
Wide operating temperature range from -55°C to 150°C
Low input capacitance of 6180pF
High power dissipation up to 780W
Product Advantages
Excellent thermal performance
Reliable and robust design
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 650V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 52mΩ @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 6180pF @ 25V
Power Dissipation (Ptot): 780W @ Tc
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: TO-247 (IXTH)
Compatibility
Compatible with TO-247 package footprint
Application Areas
Suitable for high-power switching applications, such as power supplies, motor drives, and inverters
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage, low on-resistance, and high current handling
Robust and reliable design for demanding applications
Wide operating temperature range and high power dissipation capabilities
Proven technology from a reputable manufacturer
