Manufacturer Part Number
IXFH60N50P3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with high voltage, high current, and low on-resistance characteristics.
Product Features and Performance
Supports high voltage up to 500V
Continuous drain current up to 60A at 25°C case temperature
Ultra-low on-resistance of 100mOhm at 30A, 10V
High input capacitance of 6250pF at 25V
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 1040W at Tc
Product Advantages
Excellent performance for high-power and high-voltage applications
Low conduction losses due to ultra-low on-resistance
High reliability and ruggedness
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 100mOhm @ 30A, 10V
Continuous Drain Current (Id): 60A @ 25°C case temperature
Input Capacitance (Ciss): 6250pF @ 25V
Power Dissipation (Pd): 1040W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-247AD package with through-hole mounting
Compatibility
Can be used as a replacement or upgrade for similar high-power MOSFET applications
Application Areas
High-power switching circuits
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Exceptional performance in high-voltage, high-current applications
Ultra-low on-resistance for improved efficiency
High power handling capability and wide operating temperature range
Reliable and rugged design for industrial and demanding applications
RoHS3 compliance for environmental responsibility
