Manufacturer Part Number
IXFH6N100F
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with high voltage capability and low on-resistance.
Product Features and Performance
High voltage rating up to 1000V
Low on-resistance of 1.9Ω at 3A, 10V
Continuous drain current of 6A at 25°C
Fast switching and low gate charge of 54nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and low power losses
High reliability and ruggedness
Suitable for high voltage and high power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.9Ω at 3A, 10V
Continuous Drain Current (Id): 6A at 25°C
Input Capacitance (Ciss): 1770pF at 25V
Power Dissipation (Ptot): 180W at 25°C
Quality and Safety Features
RoHS3 compliant
TO-247 package for high power and thermal performance
Compatibility
Suitable for a wide range of high voltage, high power applications such as power supplies, motor drives, and inverters.
Application Areas
Power electronics
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance and efficiency
High reliability and ruggedness
Wide operating temperature range
Suitable for high voltage, high power applications
RoHS3 compliance for environmental friendliness
