Manufacturer Part Number
IXFH75N10
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Suitable for high-frequency, high-power switching applications
Low on-resistance for high efficiency
Fast switching speed
High current capability
Product Advantages
Excellent thermal management
Robust and reliable design
High power density
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Continuous Drain Current (ID): 75A
On-State Resistance (RDS(on)): 20mΩ
Gate-to-Source Voltage (VGS): ±20V
Power Dissipation (Pd): 300W
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
High-reliability design for industrial applications
Compatibility
Compatible with a wide range of power electronics systems
Application Areas
High-frequency, high-power switching circuits
Motor drives
Power supplies
Inverters
DC-DC converters
Product Lifecycle
This product is currently in production and widely available.
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design
Wide operating temperature range
Suitable for a variety of high-power, high-frequency applications
Readily available and well-supported by the manufacturer
