Manufacturer Part Number
IXFH80N10Q
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET
Product Features and Performance
Optimized for high-efficiency power conversion and switching applications
Low on-resistance for low power loss
Fast switching speed
High voltage capability
Product Advantages
Excellent thermal performance
High reliability
Robust design
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Maximum Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 15 mΩ @ 40 A, 10 V
Continuous Drain Current (Id): 80 A @ 25°C
Input Capacitance (Ciss): 4500 pF @ 25 V
Power Dissipation (Tc): 360 W
Quality and Safety Features
Meets industrial and automotive quality standards
Robust construction for reliable operation
Compatibility
Compatible with common gate drive circuits and power supply systems
Application Areas
High-efficiency power conversion
Switching power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Exceptional performance-to-cost ratio
Proven reliability and long lifespan
Versatile applications across industries
Easy integration into existing systems
Comprehensive technical support from the manufacturer
