IXFH80N25X3 - IXYS

Manufacturer Part Number

IXFH80N25X3

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel power MOSFET

Part of the HiPerFET and Ultra X3 series

Product Features and Performance

Drain to Source Voltage (Vdss) of 250 V

Maximum Vgs of ±20 V

On-state Resistance (Rds On) of 16 mΩ @ 40 A, 10 V

Continuous Drain Current (Id) of 80 A at 25°C

Input Capacitance (Ciss) of 5,430 pF @ 25 V

Power Dissipation of 390 W at Tc

Product Advantages

Low on-state resistance for high efficiency

High voltage and current handling capabilities

Suitable for high-power switching applications

Key Technical Parameters

MOSFET technology

N-Channel FET type

Threshold Voltage (Vgs(th)) of 4.5 V @ 1.5 mA

Gate Charge (Qg) of 83 nC @ 10 V

Operating Temperature Range of -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

TO-247 (IXTH) package

Through-hole mounting

Compatibility

Suitable for a variety of high-power switching applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and medical equipment

Product Lifecycle

No information on discontinuation or replacement availability

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-state resistance for efficient operation

Suitable for a wide range of high-power switching applications

Robust and reliable performance