Manufacturer Part Number
IXFH80N65X2
Manufacturer
IXYS Corporation
Introduction
The IXFH80N65X2 is a high-performance N-channel MOSFET transistor designed for use in power electronics and industrial applications.
Product Features and Performance
High drain-to-source voltage rating of 650V
Low on-resistance of 40mOhm at 40A, 10V
Continuous drain current of 80A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 8245pF at 25V
High power dissipation capability of 890W at Tc
Product Advantages
Excellent power handling and efficiency
Robust design for industrial environments
Suitable for high-voltage, high-current applications
Ease of integration and system design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 40mOhm @ 40A, 10V
Continuous Drain Current (Id): 80A @ 25°C
Input Capacitance (Ciss): 8245pF @ 25V
Power Dissipation (Pd): 890W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-247 (IXTH) package for secure mounting and thermal management
Designed for reliable and safe operation in industrial environments
Compatibility
Compatible with standard TO-247 footprint and mounting
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation and control
Renewable energy systems
Product Lifecycle
Currently available for purchase
No discontinuation plans at this time
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust design for industrial environments
Wide operating temperature range
Low on-resistance for minimal power losses
High current and voltage capabilities
Ease of integration and system design
IXFH90N20X3IXYSMOSFET N-CH 200V 90A TO247