Manufacturer Part Number
IXFH86N30T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with trench technology in a TO-247 package.
Product Features and Performance
Drain-to-source voltage (Vdss) of 300V
Continuous drain current (Id) of 86A at 25°C case temperature
On-resistance (Rds(on)) of 43mΩ at 43A, 10V
Input capacitance (Ciss) of 11,300pF at 25V
Power dissipation of 860W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High power density
Low on-resistance
Fast switching speed
Trench technology for improved performance
Key Technical Parameters
Vdss: 300V
Id: 86A
Rds(on): 43mΩ
Ciss: 11,300pF
Power Dissipation: 860W
Quality and Safety Features
RoHS3 compliant
TO-247 through-hole package
Compatibility
Compatible with various power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No known discontinuation plans
Several Key Reasons to Choose This Product
High power density and efficiency
Low on-resistance for reduced power losses
Fast switching speed for improved system performance
Trench technology for enhanced reliability and thermal management
Robust TO-247 package for reliable operation in demanding applications