Manufacturer Part Number
IXFH6N120P
Manufacturer
IXYS Corporation
Introduction
The IXFH6N120P is a high-performance, N-channel power MOSFET transistor from IXYS Corporation. It is part of the HiPerFET and Polar series, designed for applications requiring high voltage and high current capabilities.
Product Features and Performance
High drain-source voltage rating of 1200V
Low on-resistance of 2.4Ω at 500mA, 10V
Continuous drain current of 6A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low gate charge of 92nC at 10V
High input capacitance of 2830pF at 25V
Maximum power dissipation of 250W at case temperature
Product Advantages
Excellent performance for high voltage, high current applications
Efficient power handling with low on-resistance
Wide temperature range and high reliability
Suitable for various power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.4Ω @ 500mA, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 2830pF @ 25V
Power Dissipation (Pd): 250W @ Tc
Quality and Safety Features
RoHS3 compliant
Through-hole mounting in a TO-247-3 package
Compatibility
Suitable for a wide range of power electronics and industrial control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial controls
Product Lifecycle
Current production, no known discontinuation plans
Replacement or upgrade options may be available from IXYS or other manufacturers
Key Reasons to Choose This Product
Excellent high voltage and high current performance
Low on-resistance for efficient power handling
Wide operating temperature range for reliability
Suitable for a variety of power conversion and control applications
RoHS3 compliance for environmental responsibility
