Manufacturer Part Number
IXFH6N100
Manufacturer
IXYS Corporation
Introduction
The IXFH6N100 is a high-performance N-channel MOSFET transistor designed for power switching applications.
Product Features and Performance
1000V Drain-to-Source Voltage
6A Continuous Drain Current at 25°C
2Ω Maximum On-State Resistance
2600pF Maximum Input Capacitance
130nC Maximum Gate Charge
-55°C to 150°C Operating Temperature Range
Product Advantages
Excellent power handling capability
High voltage switching performance
Low on-state resistance for efficient power conversion
Compact TO-247 package
Key Technical Parameters
MOSFET Technology
N-Channel
1000V Drain-to-Source Voltage
±20V Gate-to-Source Voltage
2Ω Maximum On-State Resistance
6A Continuous Drain Current
Quality and Safety Features
RoHS3 Compliant
Designed for reliable and safe operation
Compatibility
Through-hole mounting
Compatible with standard MOSFET driver circuits
Application Areas
Power supplies
Motor drives
Inverters
Converters
Switching regulators
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Efficient power conversion with low on-state resistance
Compact and reliable TO-247 package
Suitable for a wide range of power switching applications
Proven IXYS quality and reliability
