Manufacturer Part Number
IXFH69N30P
Manufacturer
IXYS Corporation
Introduction
The IXFH69N30P is a high-performance N-channel MOSFET transistor from IXYS Corporation. It is part of the HiPerFET and Polar series.
Product Features and Performance
High drain-source voltage rating of 300V
Low on-resistance (RDS(on)) of 49mΩ
High continuous drain current (ID) of 69A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 4960pF
High power dissipation capability of 500W
Product Advantages
Excellent performance for high-power, high-voltage applications
Efficient power switching with low conduction losses
Robust and reliable design for harsh environments
Key Technical Parameters
Drain-Source Voltage (VDS): 300V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 49mΩ
Continuous Drain Current (ID): 69A
Input Capacitance (Ciss): 4960pF
Power Dissipation (Pd): 500W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting for secure installation
Compatibility
The IXFH69N30P is compatible with a wide range of high-power, high-voltage applications.
Application Areas
Power supplies
Motor drives
Inverters
Power conversion systems
Industrial and medical equipment
Product Lifecycle
The IXFH69N30P is an active product, and IXYS Corporation continues to support it. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Exceptional performance and efficiency for high-power, high-voltage applications
Robust and reliable design for harsh environments
Wide operating temperature range and high power dissipation capability
Low on-resistance and input capacitance for improved switching performance
RoHS3 compliance for environmental sustainability