Manufacturer Part Number
IXFH52N30Q
Manufacturer
IXYS Corporation
Introduction
The IXFH52N30Q is a high-performance N-channel MOSFET from IXYS Corporation, designed for a wide range of power electronics applications.
Product Features and Performance
N-channel MOSFET with a drain-source voltage of 300V
Continuous drain current of 52A at 25°C case temperature
Low on-resistance of 60mOhm at 500mA and 10V gate-source voltage
Input capacitance of 5300pF at 25V drain-source voltage
Power dissipation of 360W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High power handling capability
Low on-resistance for efficient power conversion
Suitable for high-voltage, high-current applications
Robust design for reliable operation
Key Technical Parameters
Drain-source voltage (Vdss): 300V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 60mOhm
Continuous drain current (Id): 52A
Input capacitance (Ciss): 5300pF
Power dissipation (Pd): 360W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Designed for high-reliability applications
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power conversion and control
Motor drives
Industrial automation
Renewable energy systems
Automotive electronics
Product Lifecycle
The IXFH52N30Q is an actively supported product and is not nearing discontinuation.
Replacement or upgraded models may become available in the future, but the IXFH52N30Q remains a reliable and well-supported option.
Several Key Reasons to Choose This Product
High power handling capability for demanding applications
Low on-resistance for efficient power conversion
Robust design and wide operating temperature range for reliable operation
Compatibility with a wide range of power electronics applications
RoHS3 compliance for environmental responsibility
Continued manufacturer support and availability of the product
