Manufacturer Part Number
IXFH50N85X
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
850V Drain to Source Voltage
50A Continuous Drain Current @ 25°C
105mOhm On-Resistance @ 500mA, 10V
4480pF Input Capacitance @ 25V
890W Power Dissipation Capability
Product Advantages
High voltage and high current rating
Low on-resistance for high efficiency
Suitable for high power switching applications
Key Technical Parameters
Vds: 850V
Vgs (Max): ±30V
Rds On (Max): 105mOhm @ 500mA, 10V
Id (Continuous): 50A @ 25°C
Ciss (Max): 4480pF @ 25V
Power Dissipation (Max): 890W @ Tc
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
TO-247-3 Package
Through Hole Mounting
Application Areas
High power switching applications
Power supply, motor control, and industrial electronics
Product Lifecycle
Current product offering, no discontinuation plans
Key Reasons to Choose
High voltage and current handling capability
Low on-resistance for high efficiency
Suitable for high power, high switching frequency applications
Reliable performance across wide temperature range
