Manufacturer Part Number
IXFH12N100P
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-performance N-channel MOSFET transistor with high power density and low on-resistance.
Product Features and Performance
Drain-Source Voltage (Vdss) up to 1000V
Continuous Drain Current (Id) up to 12A at 25°C
On-Resistance (Rds(on)) as low as 1.05Ω
Input Capacitance (Ciss) of 4080pF
Power Dissipation (Pd) up to 463W
Product Advantages
Excellent high-voltage performance
Ultra-low on-resistance for high efficiency
High power density
Suitable for high-frequency, high-power applications
Key Technical Parameters
MOSFET Technology: N-Channel
Gate-Source Voltage (Vgs, max): ±30V
Threshold Voltage (Vgs(th), max): 5V
Gate Charge (Qg, max): 80nC
Quality and Safety Features
RoHS3 Compliant
Qualified for high-reliability applications
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial and high-power electronics
Product Lifecycle
Current production, no discontinuation plans
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent high-voltage and high-current performance
Ultra-low on-resistance for high efficiency
High power density and reliability
Suitable for a wide range of high-power, high-frequency applications