Manufacturer Part Number
IXFH110N25T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET in TO-247 package.
Product Features and Performance
Drain-Source Voltage (Vdss) up to 250V
Continuous Drain Current (Id) up to 110A at 25°C
On-Resistance (Rds(on)) as low as 24mΩ at 55A, 10V
Operating Temperature range from -55°C to 150°C
Input Capacitance (Ciss) of 9400pF at 25V
Power Dissipation up to 694W at Tc
Product Advantages
Excellent performance in high-power, high-frequency applications
Rugged and reliable trench MOSFET technology
Optimized for efficient and high-density power conversion
Suitable for a wide range of power electronics applications
Key Technical Parameters
N-Channel MOSFET
Vds: 250V, Vgs: ±20V
Rds(on): 24mΩ @ 55A, 10V
Id: 110A (Tc)
Ciss: 9400pF @ 25V
Qg: 157nC @ 10V
Power Dissipation: 694W (Tc)
Quality and Safety Features
RoHS3 compliant
Qualified to automotive and industrial standards
Compatibility
Compatible with a wide range of power electronics circuits and applications
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Welding equipment
Industrial and automotive power electronics
Product Lifecycle
Current product, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
Excellent performance in high-power, high-frequency applications
Rugged and reliable trench MOSFET technology
Optimized for efficient and high-density power conversion
Wide operating temperature range of -55°C to 150°C
Low on-resistance and high current capability