Manufacturer Part Number
IXFE44N60
Manufacturer
IXYS Corporation
Introduction
High power discrete semiconductor product
Single N-Channel MOSFET transistor
Product Features and Performance
Drain-Source Voltage (Vdss) up to 600V
Continuous Drain Current (Id) up to 41A at 25°C
On-state Resistance (Rds(on)) as low as 130mΩ
Fast switching speed and low gate charge
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High efficiency and low power losses
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-state Resistance (Rds(on)): 130mΩ @ 22A, 10V
Continuous Drain Current (Id): 41A at 25°C
Input Capacitance (Ciss): 8900pF @ 25V
Power Dissipation (Tc): 500W
Quality and Safety Features
MOSFET technology for high reliability
Robust SOT-227B package for chassis mount
Compliance with industry safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available product
No discontinuation plans identified
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling capability
High efficiency and low power losses
Reliable and robust design
Wide operating temperature range
Compatibility with various power electronics applications
