Manufacturer Part Number
IXFE34N100
Manufacturer
IXYS Corporation
Introduction
The IXFE34N100 is a high-performance, N-channel MOSFET transistor designed for a variety of power conversion and control applications.
Product Features and Performance
Drain-to-source voltage (VDS) of 1000V
On-state resistance (RDS(on)) of 280mΩ at 17A, 10V
Continuous drain current (ID) of 30A at 25°C
Wide operating temperature range of -55°C to 150°C
High input capacitance (Ciss) of 15,000pF at 25V
High maximum power dissipation of 580W at 25°C
Product Advantages
Robust and reliable design for demanding applications
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Suitable for high-frequency and high-power switching
Key Technical Parameters
N-Channel MOSFET technology
VDS: 1000V
VGS (Max): ±20V
RDS(on) (Max): 280mΩ @ 17A, 10V
ID (Continuous): 30A @ 25°C
Ciss (Max): 15,000pF @ 25V
Power Dissipation (Max): 580W @ 25°C
Quality and Safety Features
RoHS3 compliant
Meets industrial and automotive safety standards
Robust packaging in SOT-227B (miniBLOC) format
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Exceptional voltage and current handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range for versatile applications
Robust and reliable design for demanding environments
Compatibility with a variety of power conversion and control systems
IXFC40N30QIXYSMOSFET N-CH 300V ISOPLUS220