Manufacturer Part Number
IXFE180N20
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor suitable for a variety of power electronics applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 12 mΩ @ 500 mA, 10 V
High continuous drain current of 158 A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 200 V
Large input capacitance of 14,400 pF @ 25 V
High power dissipation capability of 500 W at 25°C case temperature
Product Advantages
Excellent performance-to-cost ratio
Robust design for reliable operation
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 200 V
Gate-to-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 12 mΩ @ 500 mA, 10 V
Continuous Drain Current (ID): 158 A @ 25°C
Input Capacitance (Ciss): 14,400 pF @ 25 V
Power Dissipation (PD): 500 W @ 25°C
Quality and Safety Features
Robust metal-oxide-semiconductor field-effect transistor (MOSFET) technology
Reliable operation within the specified temperature range
Compliant with relevant safety standards
Compatibility
Compatible with a wide range of power electronics applications, including motor drives, power supplies, and inverters.
Application Areas
Industrial power electronics
Motor drives
Power supplies
Inverters
Solar inverters
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in active production and availability.
IXYS Corporation continues to provide support and possible upgrades or replacements for this product line.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design for demanding applications
Wide operating temperature range and high power dissipation capability
Suitable for a broad range of power electronics applications
Ongoing support and potential for future upgrades or replacements from the manufacturer.
