Manufacturer Part Number
IXFE36N100
Manufacturer
IXYS Corporation
Introduction
This product is a high-performance N-channel MOSFET transistor from the IXYS Corporation.
Product Features and Performance
Operating temperature range of -55°C to 150°C
Drain to source voltage (Vdss) of 1000V
Maximum gate-source voltage (Vgs) of ±20V
On-resistance (Rds on) of 240mΩ at 18A, 10V
Continuous drain current (Id) of 33A at 25°C
Input capacitance (Ciss) of 15000pF at 25V
Maximum power dissipation of 580W at 25°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)) of 5.5V at 8mA
Gate charge (Qg) of 455nC at 10V
Quality and Safety Features
Housed in a SOT-227B package for chassis mount
Complies with relevant safety and quality standards
Compatibility
This MOSFET is compatible with a wide range of power electronics and switching applications.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
The IXFE36N100 is an actively supported product from IXYS Corporation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
Exceptional voltage and current handling capabilities
Efficient power switching performance with low on-resistance
Wide operating temperature range for reliable operation
Robust packaging and quality design for demanding applications
IXFC40N30QIXYSMOSFET N-CH 300V ISOPLUS220