IXFE39N90 - IXYS

Manufacturer Part Number

IXFE39N90

Manufacturer

IXYS Corporation

Introduction

High-performance MOSFET transistor for power electronics applications

Product Features and Performance

900V drain-source voltage rating

Low on-resistance of 220mOhm

Continuous drain current of 34A at 25°C

Wide operating temperature range of -40°C to 150°C

High power dissipation capability of 580W

Product Advantages

Excellent switching characteristics for high-frequency operation

Robust design for reliable performance

Suitable for various power conversion and control applications

Key Technical Parameters

Drain-source voltage (Vdss): 900V

Maximum gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 220mOhm

Continuous drain current (Id): 34A at 25°C

Input capacitance (Ciss): 13400pF

Power dissipation (Ptot): 580W

Quality and Safety Features

Manufactured using MOSFET technology for high reliability

Tested and qualified to industry standards for quality assurance

Compatibility

Suitable for use in a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Welding equipment

Industrial automation and control systems

Product Lifecycle

This product is an active and in-production device from IXYS Corporation.

Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Robust design for reliable operation in demanding environments

Suitable for high-frequency, high-power applications

Backed by the expertise and quality assurance of IXYS Corporation