Manufacturer Part Number
IXFE48N50QD3
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with low on-resistance and high power density
Product Features and Performance
Depletion mode MOSFET with 500V drain-source voltage rating
Very low on-resistance of 110mΩ @ 24A, 10V
Continuous drain current up to 41A at 25°C case temperature
Wide operating temperature range of -40°C to 150°C
High power dissipation capability of 400W at case temperature
Product Advantages
Excellent performance-to-cost ratio
Robust and reliable design
Suitable for high-power, high-efficiency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 110mΩ @ 24A, 10V
Continuous Drain Current (Id): 41A @ 25°C
Quality and Safety Features
RoHS3 compliant
Housed in a compact SOT-227B package
Compatibility
Can be used as a replacement or upgrade for similar power MOSFET devices
Application Areas
High-power switching applications
Motor drives
Power supplies
Inverters
Industrial automation
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust and reliable design
Suitable for high-power, high-efficiency applications
Wide operating temperature range
High power dissipation capability
