IXFE23N100 - IXYS

Manufacturer Part Number

IXFE23N100

Manufacturer

IXYS Corporation

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 1000V

Vgs (Max) of ±20V

Very low on-resistance (Rds On) of 430mOhm @ 11.5A, 10V

Continuous Drain Current (Id) of 21A @ 25°C

Input Capacitance (Ciss) of 7000 pF @ 25 V

Power Dissipation (Max) of 500W

Fast switching speed and low gate charge (Qg) of 250 nC @ 10 V

Product Advantages

Excellent high voltage and high current handling capability

Extremely low on-resistance for high efficiency

Fast switching performance

Robust and reliable design

Key Technical Parameters

MOSFET technology

N-Channel type

Vgs(th) (Max) of 5V @ 8mA

Drive Voltage (Max Rds On, Min Rds On) of 10V

Operating Temperature range of -55°C to 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Hermetically sealed SOT-227B package for reliability

Compatibility

Chassis Mount type

Application Areas

High-voltage, high-current power electronics

Switching power supplies

Motor drives

Industrial automation and control

Product Lifecycle

Current production model

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Industry-leading performance in voltage, current, and efficiency

Robust and reliable design for demanding applications

Fast switching capabilities for high-frequency power conversion

Wide operating temperature range for diverse environments