Manufacturer Part Number
IXFH12N100
Manufacturer
IXYS Corporation
Introduction
The IXFH12N100 is a high-performance N-channel MOSFET transistor that offers excellent switching characteristics and high voltage handling capability.
Product Features and Performance
N-channel MOSFET design
High drain-source voltage rating of 1000V
Low on-state resistance (RDS(ON)) of 1.05Ω
Continuous drain current (ID) of 12A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge (Qg) of 155nC
Product Advantages
Efficient power handling and high voltage capability
Exceptional thermal performance and reliability
Suitable for high-power switching applications
Robust design and compact TO-247 package
Key Technical Parameters
Drain-Source Voltage (VDS): 1000V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(ON)): 1.05Ω @ 6A, 10V
Continuous Drain Current (ID): 12A at 25°C
Input Capacitance (Ciss): 4000pF @ 25V
Power Dissipation (PD): 300W at 25°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust construction
Tested for thermal and electrical performance
Compatibility
The IXFH12N100 is a direct replacement for many similar N-channel MOSFET transistors in high-power switching applications.
Application Areas
Inverters and converters
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
The IXFH12N100 is an active and widely available product from IXYS Corporation. It is not nearing discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Exceptional voltage and current handling capabilities
Exceptional thermal performance and reliability
Efficient power handling and switching characteristics
Compact and robust TO-247 package design
Availability and support from a reputable manufacturer
