Manufacturer Part Number
IXFH12N100F
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Designed for high-power, high-voltage switching applications
Capable of handling continuous drain current up to 12A at 25°C case temperature
Excellent on-state resistance of 1.05Ω @ 6A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2700pF @ 25V
Maximum power dissipation of 300W at 25°C case temperature
Product Advantages
Robust and reliable construction
High voltage and high current handling capability
Efficient heat dissipation for better thermal management
Suitable for a wide range of high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 1.05Ω @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C case temperature
Input Capacitance (Ciss): 2700pF @ 25V
Power Dissipation (Pd): 300W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for long-term performance
Compatibility
Suitable for a wide range of high-power, high-voltage switching applications
Application Areas
High-power switching circuits
Industrial motor drives
Power supplies
Inverters and converters
Welding equipment
Plasma cutting systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Suitable replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Efficient heat dissipation and low on-state resistance for improved efficiency
Wide operating temperature range for versatile use
Robust and reliable construction for long-term performance
RoHS3 compliance for environmentally-friendly applications
